21.12.2024
ATP206 datasheet
Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)
-
МаркировкаATP206
-
ПроизводительSanyo Semiconductor
-
ОписаниеON Semiconductor ATP206 Mfr Package Description: HALOGEN FREE, ATPAK-3 Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: SINGLE Number of Terminals: 2 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Case Connection: DRAIN Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 40 A DS Breakdown Voltage-Min: 40 V Avalanche Energy Rating (Eas): 26 mJ Drain-source On Resistance-Max: 0.0160 ohm Pulsed Drain Current-Max (IDM): 120 A
-
Количество страниц4 шт.
-
ФорматPDF
-
Размер файла747,08 KB
ATP206 datasheet скачать
Новости электроники
20.12.2024
18.12.2024